QSX5 transistors 1/2 low frequency amplifier QSX5 ! ! ! ! application low frequency amplifier driver ! ! ! ! features v ce(sat) 180mv at i c = 1a / i b = 50ma < = 2) a collector current is large. 1) ! ! ! ! external dimensions (units : mm) 1.6 2.8 0.4 0.16 ( 3 ) 0.85 ( 2 ) 2.9 ( 1 ) each lead has same dimensions abbreviated symbol : x05 (6) (5) (4) ! ! ! ! absolute maximum ratings (ta=25 c) ! ! ! ! equivalent circuit ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz f t ? 360 ? mhz v ce = 2v, i e =? 200ma, f = 100mhz bv cbo 15 ?? v i c = 10 a bv ceo 12 ?? v i c = 1ma bv ebo 6 ?? v i e = 10 a i cbo ?? 100 na v cb = 15v i ebo ?? 100 na v eb = 6v v ce(sat) ? 90 180 mv i c = 1a, i b = 50ma h fe 270 ? 680 ? v ce = 2v, i c = 200ma cob ? 20 ? pf ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency collector output capacitance ? pulsed parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 15 12 6 2 500 150 ? 55~ + 150 4 ? 1 unit v v v a a mw c c ? 2 ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature single pulse, p w = 1ms each terminal mounted on a recommended (4) (5) (6) (1) (2) (3)
QSX5 transistors 2/2 ! ! ! ! packaging specifications QSX5 tr 3000 type package code basic ordering unit (pieces) taping ! ! ! ! electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 dc current gain : h fe 1000 100 ta = 100 c ta =? 40 c ta = 25 c v ce = 2v pulsed fig.1 dc current gain vs. collector current 0.001 0.01 0.1 1 10 collector current : i c (a) 0.001 0.01 1 0.1 i c /i b = 20/1 v ce = 2v pulsed ta = 100 c ta =? 40 c ta = 25 c fig.2 base-emitter saturation voltage vs. collector current collector to emitter saturation voltage : v ce(sat) (v) 0.001 0.01 0.1 1 10 collector current : i c (a) 0.001 collector saturation voltage : v ce(sat) (v) 0.01 0.1 1 ta = 25 c pulsed i c /i b = 10/1 i c /i b = 20/1 i c /i b = 50/1 fig.3 collector-emitter saturation voltage vs. collector current 0 0.5 1 1.5 base to emitter current : v be (v) 0.001 collector current : i c (a) 0.01 10 0.1 1 v ce = 2v pulsed ta = 100 c ta =? 40 c ta = 25 c fig.4 grounded emitter propagation characteristics 0.001 0.01 0.1 1 10 emitter current : i e (a) 10 transition frequency : f t (mhz) 1000 100 ta = 25 c v ce = 2v f = 100mhz fig.5 gain bandwidth product vs. emitter current 0.01 0.1 1 10 1 10 1000 100 ta = 25 c v ce = 5v f = 100mhz tstg tdon tf tr fig.6 switching time collector current : i c (a) switching time : (ns) 1 10 100 0.1 1 10 100 1000 f = 1mhz i c = 0a ta = 25?c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage emitter to base voltage : v eb ( v) collector to base voltage : v cb ( v)
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